INTEL evaluated and approved software solutions. Here to make your life easier
This application-specific, showcase gives you an overview of ESI's multi-physics solutions used to model ICP chambers including various asymmetric's in geometry and complexity in chemistry as well as how this Intel-approved software also optimizes chamber design and process parameters with complex plasma chemistry models.
KEY TAKEAWAYS INCLUDE:
- How to build plasma reactions for real gas mixtures
- Usage of 0D model for mechanism reduction and process space exploration
- Best practices in model set up for high simulation fidelity and faster convergence
- Visualization of source functions, reaction pathways, ion energy, and angular distributions
- How to quickly import plasma gas-phase chemistry mechanisms in Chemkin format
- High-fidelity 3D simulation incorporating chamber, coil, and wafer geometric complexity
- Parametric design space exploration including coil design, Faraday shield placement. power, pressure, flow rate, and plasma chemistry
- ICP reactors performance optimization and process calibration
THERE'S MORE!
- Explore Process Perimeters – optimizing – on plasma – saving time and cost and picking the right combination of conditions improving performance. Production ratio
- Realize impact on uniformity on wafer edge (deposition or etch)
- Optimize where you are placing everything.
- Spark ID and elimination (elimination on the wafer edge and within the chamber) reduce damage and degradation of chamber.
- Source – use simulation to optimize plasma source behavior to generate and sustain plasma.
WANT TO SPEAK WITH OUR EXPERTS?
Abhra Roy
Technical Business Dev Manager
Abrha has over 15 years of experience in modeling and simulations for plasma and thin-film modeling
Jun-Chieh (Jerry) Wang
Software Development Engineer
Jerry is an expert in plasma modeling (CCP and ICP)
